1994. 3. 23
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA1241
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
STROBO FLASH APPLICATION.
HIGH CURRENT APPLICATION.
FEATURES
h
FE
=100 320 (V
CE
=-2V, I
C
=-0.5A).
h
FE
=70(Min.) (V
CE
=-2V, I
C
=-4A).
Low Collector Saturation Voltage.
: V
CE(sat)
=-0.5V (I
C
=-3A, I
B
=-75mA).
High Power Dissipation : P
C
=1W.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A
B
D
E
G
H
K
L
1. EMITTER
2. COLLECTOR
3. BASE
P
TO-92L
7.20 MAX
5.20 MAX
2.50 MAX
0.60 MAX
1.27
1.70 MAX
0.55 MAX
14.00 0.50
0.35 MIN
0.75 0.10
4
F
J
M
O
Q
25
1.25
1.50
0.10 MAX
DEPTH:0.2
1
2
3
B
A
C
Q
K
F
F
M
M
N
N
O
H
L
J
D
C
N
G
P
H
H
E
D
H
R
S
12.50 0.50
R
1.00
S
1.15 MAX
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification O:100 200, Y:160 320
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-35
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-8
V
Collector Current
I
C
-5
A
Base Current
I
B
-0.5
A
Collector Power Dissipation
P
C
1
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-35V, I
E
=0
-
-
-100
nA
Emitter Cut-off Current
I
EBO
V
EB
=-8V, I
C
=0
-
-
-100
nA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-10mA, I
B
=0
-20
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-1mA, I
C
=0
-8
-
-
V
DC Current Gain
h
FE
(1) (Note)
V
CE
=-2V, I
C
=-0.5A
100
-
320
h
FE
(2)
V
CE
=-2V, I
C
=-4A
70
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-3A, I
B
=-75mA
-
-
-0.5
V
Base-Emitter Voltage
V
BE
V
CE
=-2V, I
C
=-4A
-
-
-1.5
V
Transition Frequency
f
T
V
CE
=-2V, I
C
=-0.5A
-
170
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
62
-
pF
1994. 3. 23
2/2
KTA1241
Revision No : 0
I - V
C
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0
-2
C
0
COLLECTOR CURRENT I (A)
-2
V - I
CE(sat)
C
C
COLLECTOR CURRENT I (A)
-0.01
-0.03
CE(sat)
VOLTAGE V (V)
-2
COLLECTOR CURRENT I (A)
0
C
-0.4
0
BASE-EMITTER VOLTAGE V (V)
BE
BE
C
I - V
COLLECTOR POWER DISSIPATION P (W)
0
C
0.2
20
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
COLLECTOR CURRENT I (A)
C
COLLECTOR-EMITTER VOLTAGE V (V)
CE
SAFE OPERATING AREA
-4
-6
-8
-10
-4
-6
-8
COMMON EMITTER
Ta=25 C
-150mA
I =-10mA
B
-100mA
-70mA
-50mA
-30mA
-20mA
-0.8
-1.2
-1.6
-2.0
-4
-6
-8
COMMON EMITTER
V =-2V
CE
Ta=100 C
Ta=-25 C
Ta=25 C
10
DC CURRENT GAIN h
FE
1k
-0.01
COLLECTOR CURRENT I (A)
C
C
FE
h - I
-0.03
-0.1
-0.3
-1
-3
-10
30
50
100
300
500
COMMON EMITTER
V =-2V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
COLLECTOR-EMITTER SATURATION
-0.03
-0.1
-0.3
-1
-3
-10
-0.05
-0.1
-0.3
-0.5
-1
-3
COMMON EMITTER
I /I =40
C
B
Ta=100 C
Ta=-25 C
Ta=25 C
40
60
80
100
120
140
160
0.4
0.6
0.8
1.0
1.2
-0.01
-10
-0.1
-0.3
-1
-3
-30
-100
-0.03
-0.1
-0.3
-1
-3
-10
-30
-100
I MAX.(PULSE)*
C
DC
OPE
RA
TION Ta
=25
C
1ms
*
100ms*
*SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
10
m
s*
I
C
MAX.
(CONTINUOUS)
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